ar c hive inf o rmati o n a rchive information mrf21030lr3 mrf21030lsr3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 2000 to 2200 mhz. suitable for fm, tdma, cdma and multicarrier amplifier applications. to be used in class ab for pcn--pcs/cellular radio and wll applications. ? wideband cdma performance: --45 db acpr @ 4.096 mhz, 28 volts output power ? 3.5 watts power gain ? 14 db efficiency ? 15% ? capable of handling 10:1 vswr, @ 28 vdc, 2110 mhz, 30 watts cw output power features ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equival ent large--signal impedance parameters ? low gold plating thickness on leads, 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --0.5, +15 vdc total device dissipation @ t c =25 c derate above 25 c p d 83.3 0.48 w w/ c storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 2.1 c/w table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) document number: mrf21030 rev. 12, 5/2006 freescale semiconductor technical data mrf21030lr3 mrf21030lsr3 2200 mhz, 30 w, 28 v lateral n--channel rf power mosfets case 465e--04, style 1 ni--400 mrf21030lr3 case 465f--04, style 1 ni--400s mrf21030lsr3 ? freescale semiconductor, inc., 2006, 2008. a ll rights reserved.
ar c hive inf o rmati o n a rchive information 2 rf device data freescale semiconductor mrf21030lr3 mrf21030lsr3 table 4. electrical characteristics (t c =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain--source breakdown voltage (v gs =0vdc,i d =20 a) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 100 adc) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds =28vdc,i d = 250 ma) v gs(q) 2 3.3 4.5 vdc drain--source on--voltage (v gs =10vdc,i d =1adc) v ds(on) ? 0.29 0.4 vdc forward transconductance (v ds =10vdc,i d =1adc) g fs ? 2 ? s dynamic characteristics input capacitance (including input matching capacitor in package) (1) (v ds =28vdc,v gs =0,f=1mhz) c iss ? 98.5 ? pf output capacitance (1) (v ds =28vdc,v gs =0,f=1mhz) c oss ? 37 ? pf reverse transfer capacitance (v ds =28vdc,v gs =0,f=1mhz) c rss ? 1.3 ? pf functional tests (in freescale test fixture, 50 ohm system) two--tone common--source amplifier power gain (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) g ps ? 13 ? db two--tone drain efficiency (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) ? 33 ? % 3rd order intermodulation distortion (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) imd ? -- 3 0 ? dbc input return loss (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2140.0 mhz, f2 = 2140.1 mhz) irl ? -- 1 3 ? db two--tone common--source amplifier power gain (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) g ps 12 13 ? db two--tone drain efficiency (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) 31 33 ? % 3rd order intermodulation distortion (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) imd ? -- 3 0 --27.5 dbc input return loss (v dd =28vdc,p out = 30 w pep, i dq = 250 ma, f1 = 2110.0 mhz, f2 = 2110.1 mhz and f1 = 2170.0 mhz, f2 = 2170.1 mhz) irl ? -- 1 3 -- 9 db 1. part is internally matched both on input and output.
ar c hive inf o rmati o n a rchive information mrf21030lr3 mrf21030lsr3 3 rf device data freescale semiconductor figure 1. mrf21030lr3(sr3) test circuit schematic rf input rf output z1 z2 v bias c2 c9 c6 + l1 dut v supply b1, b2 short ferrite beads c1 1 pf chip capacitor c2 4.7 pf chip capacitor c3 0.5 pf chip capacitor c4 3.9 pf chip capacitor c5, c12 0.1 f chip capacitors c6, c13 470 f, 63 v electrolytic chip capacitors c7, c8 0.3 pf chip capacitors c9 3.6 pf chip capacitor c10 22 f tantalum chip capacitor c11 5.1 pf chip capacitor l1, l2 12.5 nh inductors r1, r2 12 ? chip resistors (1206) z1 0.153 x 0.087 microstrip z2 0.509 x 0.156 microstrip z3 0.572 x 0.087 microstrip z4 0.509 x 0.232 microstrip z5 0.277 x 0.143 microstrip z6 0.200 x 0.305 microstrip z7 0.200 x0.511 microstrip z8 0.510 x 0.328 microstrip z9 0.608 x 0.081 microstrip pcb taconic tlx8, 30 mils, r =2.55 z3 c13 c11 z8 z9 z7 c5 c10 z5 z6 l2 b2 r2 c4 c1 z4 z10 c3 c8 + c12 + figure 2. mrf21030lr3(sr3) test circuit component layout c7 b1 r1 + + c1 c2 c3 l1 c4 c8 c7 l2 c9 c11 c10 b2 r2 c12 c13 c5 c6 r1 b1 v v ground ground wb1 wb2 cut out area bias supply mrf21030 rev 1 freescale has begun the transition of marking printed circuit b oards (pcbs) with the freesca le semiconductor signature/- logo. pcbs may have either motorola or freescale markings dur ing the transition period. these changes will have no impact on form, fit or function of the current product.
ar c hive inf o rmati o n a rchive information 4 rf device data freescale semiconductor mrf21030lr3 mrf21030lsr3 typical characteristics v dd =28vdc,p out = 30 w (pep), i dq = 250 ma two--tone measurement, 100 khz tone spacing irl imd g ps , drain efficiency (%), g ps , power gain (db) adjacent channel power ratio (db) figure 3. class ab broadband circuit performance f, frequency (mhz) 0 2120 figure 4. cdma acpr, power gain and drain efficiency versus output power 5 p out , output power (watts avg.) cdma 30 20 2100 2180 2 2080 -- 3 5 figure 5. intermodulation distortion versus output power p out , output power (watts) pep -- 5 5 figure 6. intermodulation distortion products versus output power p out , output power (watts) pep figure 7. power gain versus output power p out , output power (watts) pep 100 1.0 1.0 15 16 60 -- 4 5 -- 3 5 -- 1 5 -- 3 0 10 20 10 14 2140 2160 45 100 10 1.0 13 2200 100 30 40 -- 5 -- 2 5 -- 2 0 10 3rd order 5th order -- 2 5 -- 5 0 -- 4 0 -- 3 0 -- 2 0 -- 5 0 -- 7 0 -- 6 0 -- 4 0 -- 3 0 irl, input return loss (db) imd, intermodulatio n distortion (dbc) , drain efficiency (%), g ps , power gain (db) figure 8. power gain and intermodulation distortion versus supply voltage v dd , drain voltage (volts) 34 24 -- 3 0 -- 2 2 imd, intermodulatio n distortion (dbc) 28 20 -- 3 4 -- 3 8 -- 2 6 15 25 -- 7 0 -- 3 0 -- 5 0 -- 2 0 -- 4 0 -- 6 0 6 v dd =28vdc,i dq = 250 ma, f = 2140 mhz channel spacing (channel bandwidth): 4.096 mhz (5 mhz) imd, intermodulatio n distortion (dbc) 10 200 ma 250 ma 400 ma v dd = 28 vdc, f = 2140 mhz two--tone measurement, 100 khz tone spacing imd, intermodulatio n distortion (dbc) v dd =28vdc,i dq = 250 ma, f = 2140 mhz two--tone measurement, 100 khz tone spacing g ps , power gain (db) v dd = 28 vdc, f = 2140 mhz two--tone measurement, 100 khz tone spacing g ps , power gain (db) 13 13.5 15 14.5 14 26 30 p out = 30 w (pep) i dq = 250 ma, f = 2140 mhz two--tone measurement, 100 khz tone spacing g ps g ps imd 01 3 350 ma 300 ma 200 ma 250 ma 400 ma 350 ma 300 ma 22 32 7th order 50 --10 acpr -- 3 2 -- 2 4 -- 3 6 -- 2 8
ar c hive inf o rmati o n a rchive information mrf21030lr3 mrf21030lsr3 5 rf device data freescale semiconductor f mhz z source ? z load ? 2110 2140 2170 15.3 -- j9.4 14.3 -- j8.8 14.6 -- j9.4 3.7 -- j0.78 3.4 -- j0.37 3.0 + j0.13 v dd =28v,i dq = 250 ma, p out = 30 w pep figure 9. series equivalent source and load impedance z o =25 ? f = 2110 mhz f = 2170 mhz f = 2110 mhz f = 2170 mhz z source z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network
ar c hive inf o rmati o n a rchive information 6 rf device data freescale semiconductor mrf21030lr3 mrf21030lsr3 notes
ar c hive inf o rmati o n a rchive information mrf21030lr3 mrf21030lsr3 7 rf device data freescale semiconductor package dimensions case 465e--04 issue f ni--400 mrf21030lr3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. dimension h is measured 0.030 (0.762) away from package body. 4. information only: corner break (4x) to be .060 .005 (1.52 0.13) radius or .06 .005 (1.52 0.13) x 45 chamfer. style 1: pin 1. drain 2. gate 3. source seating plane 2x d n(lid) e r(lid) f 2x k a t c m b m bbb a m t h b b g a m a m ccc b m t m a m bbb b m t 1 2 3 2x q m (insulator) s (insulator) m a m ccc b m t m a m aaa b m t m a m aaa b m t dim a min max min max millimeters .795 .805 20.19 20.44 inches b .380 .390 9.65 9.9 c .125 .163 3.17 4.14 d .275 .285 6.98 7.24 e .035 .045 0.89 1.14 f .004 .006 0.10 0.15 g h .057 .067 1.45 1.7 k .092 .122 2.33 3.1 m .395 .405 10 10.3 n .395 .405 10 10.3 q .120 .130 3.05 3.3 r .395 .405 10 10.3 s .395 .405 10 10.3 aaa bbb ccc .600 bsc 15.24 bsc .005 bsc 0.127 bsc .010 bsc 0.254 bsc .015 bsc 0.381 bsc see note 4 case 465f--04 issue e ni--400s mrf21030lsr3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m--1994. 3. dimension h is measured 0.030 (0.762) away from package body. style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 e f 2x k m a m bbb b m t a t c h b a dim a min max min max millimeters .395 .405 10.03 10.29 inches b .395 .405 10.03 10.29 c .125 .163 3.18 4.14 d .275 .285 6.98 7.24 e .035 .045 0.89 1.14 f .004 .006 0.10 0.15 h .057 .067 1.45 1.70 k .092 .122 2.34 3.10 m .395 .405 10.03 10.29 s .395 .405 10.03 10.29 aaa .005 ref 0.127 ref 2x d m a m ccc b m t bbb .010 ref 0.254 ref ccc .015 ref 0.38 ref n .395 .405 10.03 10.29 r .395 .405 10.03 10.29 m a m ccc b m t m a m aaa b m t n (lid) m (insulator) (flange) 3 b (flange) r (lid) s (insulator) m a m aaa b m t
ar c hive inf o rmati o n a rchive information 8 rf device data freescale semiconductor mrf21030lr3 mrf21030lsr3 revision history the following table summarizes revisions to this document. revision date description 12 dec. 2010 ? mrf21030 rev. 12 data sheet archived. data sheet split due to change in part life cycle. see mrf21030--1 rev. 13 for mrf21030lsr3 and mrf21030--2 rev. 14 for mrf21030lr3.
ar c hive inf o rmati o n a rchive information mrf21030lr3 mrf21030lsr3 9 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com e--mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1--800--521--6274 or +1--480--768--2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1--800--441--2447 or 303--675--2140 fax: 303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf21030 rev. 12, 5/2006
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